Advanced-polarization-based-design-of-algan-gan-hemts

Enhancement-mode GaN-based HEMTs for high -voltage

Many of the advances in hetero-epitaxy of GaN and AlGaN were based on early.

Unpassivated GaN/AlGaN/GaN Power High Electron Mobility

A Review of GaN on SiC High Electron-Mobility Power

Simulation and optimization of GaN-based metal-oxide

Anomalous Output Conductance in N-Polar GaN High Electron

Anomalous Output Conductance in N-Polar. frequency performance of AlGaN/GaN high electron mobility transistors. contact resistance in GaN-based HEMTs since.

Development of Fluorine Plasma Treatment for AlGaN/GaN

18 Algan-gan Hemts | Field Effect Transistor | Building





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